Książka

SAMWIN

https://www.samwinsemi.com/products/sw050r68e8t-n-channel-enhanced-mode-to-252-mosfet.html
"Features
High ruggedness

Low RDS(ON) (Typ 5.3mΩ)@VGS=10V

Low Gate Charge (Typ 130nC)

Improved dv/dt Capability

100% Avalanche Tested

Application: Synchronous Rectification, Li Battery Protect Board, Motor Drives



General Description
This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
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